| PART |
Description |
Maker |
| PDCS6112 PDCS6112H PDCS6112V PDCS6190 PDCS6190H PD |
DC/DC POWER MODULES 1 AMP ADJUSTABLE
|
Premier Magnetics, Inc.
|
| PDCS5233V PDCS5212V PDCS5218V PDCS5225V PDCS5250V |
DC/DC POWER MODULES 2 AMP ADJUSTABLE
|
Premier Magnetics, Inc.
|
| MCC162-18IO1 MCC162-14IO1 MCD162-18IO1 MCD162-12IO |
Thyristor and Rectifiers Modules
PC Board Connector; No. of Contacts:8; Pitch Spacing:3.96mm; No. of Rows:1; Mounting Type:PCB Thru-hole; Body Material:PA Polyamide (Nylon); Contact
Thyristor Modules Thyristor/Diode Modules 300 A, 1400 V, SCR
Thyristor Modules Thyristor/Diode Modules 晶闸管模块可控硅/二极管模
Thyristor Modules Thyristor/Diode Modules 300 A, 800 V, SCR
Thyristor Modules Thyristor/Diode Modules 300 A, 1800 V, SCR
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| SK100DAL100D SK100DB100D |
NPN POWER DARLUNGTON MODULES 100A 1000V 100 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
NPN Power Darlington Modules
|
Semikron International
|
| VUO28-08NO7 VUO28-06NO7 |
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
|
IXYS
|
| MDD312-12N1 L102 MDD312-18N1 MDD312-14N1 MDD312-16 |
Thyristor and Rectifiers Modules
High Power Diode Modules
CAT6A PLENUM, GREEN, SPOOBULK CABLE
|
IXYS Corporation
|
| VBE26-06NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges with Fast Recovery Diodes
|
IXYS
|
| IXFE48N50QD3 IXFE44N50QD2 IXFE44N50QD3 IXFE48N50QD |
Buck & Boost Configurations for PFC & Motor Control Circuits 39 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
Buck & Boost Configurations for PFC & Motor Control Circuits
Discrete MOSFETs: HiPerFET Power MOSFETS
MOSFET Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| PM15CNJ060 E80271 E80276 |
MITSUBISHI <INTELLIGENT POWER MODULES> FLAT-BASE TYPE INSULATED PACKAGE 三菱\u003cINTELLIGENT POWER MODULES\u003e平性基地型绝缘包装
INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
MITSUBISHI FLAT-BASE TYPE INSULATED PACKAGE
IPMS Modules: 600V
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| EDI8F3265C20MZC EDI8F3265C20MMC |
High Speed, Dual Channel Power MOSFET Drivers; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R X32号的SRAM模块
|
TE Connectivity, Ltd.
|
